EECS 320: Introduction to Semiconductor Devices
Instructor: Professor Zetian Mi
This is an introduction course to semiconductor devices. We begin with a discussion on how electron energy bands are formed in semiconductors; followed by discussions on equilibrium statistics of electrons and holes, drift, diffusion currents, and generation and recombination processes. We then examine the principles and operations of essential semiconductor devices used in today’s electronics: diodes, light detectors and emitters, bipolar junction transistors and MOSFETs. The goal is to develop a solid understanding of the device concepts that will be needed in a broad range of areas from semiconductor to circuit (analog, digital and VLSI) design and engineering.
Keys to success: This course requires you to think and understand concepts. The ability to perform mathematical calculations, or reproduce a problem solving procedure alone will not allow you to succeed. The concepts in this course are more abstract than most 2xx and 3xx EECS courses, with a higher demand on critical thinking and lesser demand on repetition and mechanical calculations. It is essential that you develop good study habits: read before lecture, attend and actively participate in all class sessions, and be sure to understand concepts in homework (do not merely seek the answer).
Pierret, Robert F. Semiconductor Device Fundamentals. 2 Revised Ed ed. Toronto: Addison Wesley, 1996.
- Chapter 1 Crystal Structures and Energy bands
- Chapter 2 Carrier transport in semiconductors: scattering, mobility, drift, diffusion, generation, recombination
- Chapter 3 PN diodes: electrostatics, I-V, non-ideal, transient, LEDs, solar cells, Schottky diodes
- Chapter 4 BJTs: electrostatics, I-V, circuit models
- Chapter 5 FETs: MESFETs, MOS capacitors, MOSFET threshold, I-V, non-ideal, circuit models, CMOS
- Other topics, e.g. Moore’s Law and scaling challenges