Elaheh Ahmadi receives 2022 ISCS Young Scientist Award for seminal contributions to MBE N-polar (Al,Ga,In)N and (Al,Ga)2O3 heterostructures
Prof. Elaheh Ahmadi received the 2022 ISCS Young Scientist Award for her outstanding contributions to the progress of Nitride- and Ga2O3-based semiconductors. The award citation specifically mentions her “Seminal contributions to molecular beam epitaxy of N-polar (Al,Ga,In)N and (Al,Ga)2O3 heterostructures.”
Among Ahmadi’s contributions to the field are the first demonstration of N-polar InAlN films with uniform composition by plasma assisted molecular beam epitaxy (PAMBE); demonstration of N-polar GaN heterostructures with record high electron mobility and low sheet resistance by PAMBE; first demonstration of Ge-doping of Ga2O3; and first demonstration of (AlGa)2O3-Ga2O3 modulation-doped field effect transistors.
This fundamental research is directly applicable to the next generation of transistors and devices capable of providing higher efficiency in RF applications such as 5G and beyond, Internet of Things, AI and autonomous vehicles, and power switching applications in distributed grid systems, energy-intensive industrial systems, and electric vehicles.
Additional awards received by Ahmadi include the ONR and AFOSR Young Investigator Awards, the DARPA Young Faculty Award, and the NSF CAREER Award. In addition, her publications have been selected as Editor’s pick by the Journal of Applied Physics and the Applied Physics Letters.
The ISCS Young Scientist award was established in 1986 and is given annually to an outstanding researcher under the age of 40. Ahmadi was presented with the award at the international 2022 Compound Semiconductor Week, held this year May 31 – June 3, 2022 in Ann Arbor.