Updating the textbook on polarization in gallium nitride to optimize wide bandgap semiconductors
Understanding the phenomenon underpinning the material’s electronic performance will inform the design of smaller, faster and more efficient electronic and quantum devices.From new material to device: Ferroelectric HEMT could be a game changer for next generation electronics
Prof. Zetian Mi’s team proved the viability of a reconfigurable, ScAlN/AlGaN/GaN ferroelectric HEMT transistor that is critical for next-generation communication and computing systems
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