Unified Physical Mechanism and Implementation of Oxide-based RRAM

This talk will address the physical mechanism of resistive switching in oxide-based resistive switching random access memory (RRAM) and implantation for the modeling and simulation of RRAM performances. A unified physical mechanism is presented to elucidate the microscopic physical properties of RRAM for both unipolar and bipolar resistive switching. In the unified mechanism, the resistive switching is owed to the formation and rupture of oxygen vacancy (Vo) filaments, governed by the generation and recombination of VO with dissociative oxygen ions from different sources. Based on the unified mechanism, various memory properties such as switching, retention, and endurance can be modeled and simulated. Novel defect-engineering-based methodology could be established to quantify and optimize the switching characteristics of metal-oxide-based RRAM device cells.
Jinfeng Kang received his B.S. degree in physics from Dalian University of Technology in 1984, and M.S. and Ph.D degrees in solid-state electronics from Peking University in 1992 and 1995 respectively. He is Full Professor of Electronics Engineering Computer Science School, Peking University with research interest in nano devices and materials for computing and data storage, high-k/metal gate technology, and solar cell. Since 1996 he joined Institute of Microelectronics in Peking University as a post-doctoral fellow. In 1997 he joined the faculty first as an associate professor then professor in 2001. From 2002 to 2003, he was invited to work in SNDL at National University of Singapore as a visiting professor to perform the high-k/metal gate project. He has completed several Chinese national key research projects in microelectronics as PI/Co-PI, e.g. 863 & 973 Programs and Chinese National Natural Science Fund. He has authored and co-authored over 150 research papers. He has extensive research experiences for the New Oxides application in Microelectronics, High-K/Metal Gate, Modeling and Reliability of advanced CMOS, Non-volatile memory technologies (RRAM), and Solar Cell. He was ever awarded with 2nd Prize of National Award for Science and Technology Progress, 1st Prize of Ministry of Education Science and Technology Progress, and 1st Prize of Beijing Technology Innovation.