Semiconductor Nanoelectronic and Nanophotonic Devices: Performance and Scalability

This talk will focus on three platform nanotechnologies developed at Illinois. First, I will introduce a method to realize scalable 3D III-V transistors using planar nanowire arrays. Planar nanowires represent a new nanowire paradigm that is self-aligned, transfer-printable, and compatible with planar processing technologies. Planar nanowire growth and doping mechanism by MOCVD, as well as the device characteristics of MESFET, MOSFET, and HEMT using GaAs or InGaAs planar nanowires as the channel material, will be analyzed. I will then discuss strain-induced self-rolled-up tubes as a platform technology for dramatic miniaturization and performance enhancement of electronic devices by going 3D through self-assembly using 2D processing. Finally, a novel semiconductor etching method, metal-assisted chemical etching (MacEtch), will be presented. MacEtch is wet in nature but anisotropic, and capable of unprecedented aspect ratio and versatility. Vertical nanowire based solar cells and LEDs fabricated using MacEtch will be demonstrated along with those grown by MOCVD on silicon and graphene substrates.
Xiuling Li received her B.S. degree from Peking University and Ph.D. degree from the University of California at Los Angeles. She joined the faculty of the University of Illinois in 2007, after working at a startup company for six years. She is currently an associate professor in the Department of Electrical and Computer Engineering. Her research interests are in the area of nanostructured semiconductor materials and devices. She has won the NSF CAREER award (2008), DARPA Young Faculty Award (2009), ONR Young Investigator Award (2011), and the Dean's Award for Excellence in Research (2012).